N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXYS IXFN140N20P

RS Stock No.:: 193-616P
Mfr. Part No.:: IXFN140N20P
Manufacturer:: IXYS

N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXYS IXFN140N20P

328 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each (Supplied in a Tube)

MYR128.20

Units	Per Unit
5 +	MYR128.20

RS Stock No.:: 193-616P
Mfr. Part No.:: IXFN140N20P
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	115 A
Maximum Drain Source Voltage	200 V
Package Type	SOT-227B
Series	HiperFET, Polar
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	18 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	680 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Length	38.23mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	240 nC @ 10 V
Number of Elements per Chip	1
Width	25.42mm
Minimum Operating Temperature	-55 °C
Height	9.6mm

N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXYS IXFN140N20P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series