N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXYS IXFH120N20P

RS Stock No.:: 193-458P
Mfr. Part No.:: IXFH120N20P
Manufacturer:: IXYS

N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXYS IXFH120N20P

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16 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each (Supplied in a Tube)

MYR57.04

Units	Per Unit
8 - 14	MYR57.04
15 +	MYR48.07

RS Stock No.:: 193-458P
Mfr. Part No.:: IXFH120N20P
Manufacturer:: IXYS

IXFH120N20P_Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	200 V
Package Type	TO-247
Series	HiperFET, Polar
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	22 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	714 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	152 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	5.3mm
Length	16.26mm
Height	21.46mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXYS IXFH120N20P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series