Fairchild Semiconductor, Type N-Channel IGBT, 21 A 430 V, 3-Pin TO-220AB, Through Hole

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Subtotal 15 units (supplied in a tube)*

MYR214.98

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Being discontinued
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15 - 20MYR14.332
25 +MYR13.618

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Packaging Options:
RS Stock No.:
862-9359P
Mfr. Part No.:
ISL9V3040P3
Manufacturer:
Fairchild Semiconductor
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Brand

Fairchild Semiconductor

Product Type

IGBT

Maximum Continuous Collector Current Ic

21A

Maximum Collector Emitter Voltage Vceo

430V

Maximum Power Dissipation Pd

150W

Package Type

TO-220AB

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

15μs

Maximum Gate Emitter Voltage VGEO

±10 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

EcoSPARK

Automotive Standard

AEC-Q101

Energy Rating

300mJ

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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