Toshiba GT60PR21,STA1F(S IGBT, 60 A 1100 V, 3-Pin TO-3PN, Through Hole

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MYR20.76

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20 - 49MYR20.34
50 - 99MYR19.73
100 - 249MYR19.26
250 +MYR18.84

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RS Stock No.:
799-4889
Mfr. Part No.:
GT60PR21,STA1F(S
Manufacturer:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1100 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

333 W

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.5 x 4.5 x 20mm

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, Toshiba



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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