onsemi FGH40N60SMD, Type N-Channel IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 759-9279
- Mfr. Part No.:
- FGH40N60SMD
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
MYR20.09
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Units | Per Unit |
|---|---|
| 1 - 7 | MYR20.09 |
| 8 - 14 | MYR19.81 |
| 15 + | MYR19.43 |
*price indicative
- RS Stock No.:
- 759-9279
- Mfr. Part No.:
- FGH40N60SMD
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 349W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Maximum Operating Temperature | 175°C | |
| Width | 20.82 mm | |
| Series | Field Stop | |
| Standards/Approvals | RoHS | |
| Height | 4.82mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 349W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Maximum Operating Temperature 175°C | ||
Width 20.82 mm | ||
Series Field Stop | ||
Standards/Approvals RoHS | ||
Height 4.82mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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