Toshiba GT40Q321(Q) IGBT, 42 A 1200 V, 3-Pin TO-3PN, Through Hole
- RS Stock No.:
- 601-2835P
- Mfr. Part No.:
- GT40Q321(Q)
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal 25 units (supplied in a bag)*
MYR463.75
FREE delivery for orders over RM 500.00
Stock information currently inaccessible
Units | Per Unit |
|---|---|
| 25 - 99 | MYR18.55 |
| 100 - 249 | MYR15.51 |
| 250 - 499 | MYR13.84 |
| 500 + | MYR12.91 |
*price indicative
- RS Stock No.:
- 601-2835P
- Mfr. Part No.:
- GT40Q321(Q)
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Maximum Continuous Collector Current | 42 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Package Type | TO-3PN | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Dimensions | 15.9 x 4.8 x 19mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current 42 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Package Type TO-3PN | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Dimensions 15.9 x 4.8 x 19mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.