STMicroelectronics STGD4H60DF Single Collector IGBT, 4 A 600 V, 3-Pin TO-252, Surface

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Subtotal (1 reel of 2500 units)*

MYR6,100.00

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Units
Per Unit
Per Reel*
2500 +MYR2.44MYR6,100.00

*price indicative

RS Stock No.:
287-7044
Mfr. Part No.:
STGD4H60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

4A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Number of Transistors

1

Maximum Power Dissipation Pd

75W

Configuration

Single Collector

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Maximum Operating Temperature

175°C

Width

6.7 mm

Length

1.7mm

Height

2.3mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Trench gate field stop is an IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Low thermal resistance

Short circuit rated

Soft and fast recovery antiparallel diode

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