Infineon FP75R12N2T7BPSA2, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 31-Pin EconoPIM2, Panel
- RS Stock No.:
- 273-2927
- Mfr. Part No.:
- FP75R12N2T7BPSA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 15 units)*
MYR9,100.755
FREE delivery for orders over RM 500.00
In Stock
- Plus 15 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tray* |
|---|---|---|
| 15 - 15 | MYR606.717 | MYR9,100.76 |
| 30 + | MYR556.157 | MYR8,342.36 |
*price indicative
- RS Stock No.:
- 273-2927
- Mfr. Part No.:
- FP75R12N2T7BPSA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 7 | |
| Package Type | EconoPIM2 | |
| Configuration | Common Emitter | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.77V | |
| Maximum Operating Temperature | 175°C | |
| Length | 107.5mm | |
| Width | 45 mm | |
| Height | 20.5mm | |
| Standards/Approvals | IEC 60749, IEC 60068, IEC 60747 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 7 | ||
Package Type EconoPIM2 | ||
Configuration Common Emitter | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 31 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.77V | ||
Maximum Operating Temperature 175°C | ||
Length 107.5mm | ||
Width 45 mm | ||
Height 20.5mm | ||
Standards/Approvals IEC 60749, IEC 60068, IEC 60747 | ||
Automotive Standard No | ||
The Infineon three phase PIM IGBT module with IGBT7, emitter controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings.
High reliability and power density
Copper base plate for optimized heat spread
High power density
Solder contact technology
Related links
- Infineon 75 A 1200 V Panel
- Infineon FP100R12N2T7BPSA2 100 A 1200 V Panel
- Infineon 100 A 1200 V Panel
- onsemi FGY4L75T120SWD 75 A 1200 V Through Hole
- Infineon FS50R12KT3BPSA1 75 A 1200 V Panel
- Infineon 75 A 1200 V Panel
- Infineon FS50R12W1T7B11BOMA1 50 A 1200 V Module, Panel
- onsemi FGY4L160T120SWD 160 A 1200 V Through Hole