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Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V

RS Stock No.:: 244-5822
Mfr. Part No.:: FF300R12KT4HOSA1
Manufacturer:: Infineon

Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V

Bulk discount available

Subtotal (1 tray of 10 units)*

MYR5,671.79

FREE delivery for orders over RM 500.00

Temporarily out of stock

Shipping from 23 November 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Tray*
10 - 10	MYR567.179	MYR5,671.79
20 - 20	MYR555.84	MYR5,558.40
30 +	MYR544.722	MYR5,447.22

*price indicative

RS Stock No.:: 244-5822
Mfr. Part No.:: FF300R12KT4HOSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	450 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	1.6 kW
	Number of Transistors	2

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 450 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 1.6 kW
	Number of Transistors 2

Datasheet - FF300R12KT4HOSA1

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 1600 W, maximum gate threshold voltage is 6.4 V.

Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA

Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V

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