STMicroelectronics, Type N-Channel IGBT, 115 A 650 V, 3-Pin TO-247, Through Hole

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 tube of 30 units)*

MYR674.04

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 23 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Tube*
30 - 30MYR22.468MYR674.04
60 - 90MYR21.973MYR659.19
120 +MYR21.569MYR647.07

*price indicative

RS Stock No.:
206-7211
Mfr. Part No.:
STGWA75H65DFB2
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

115A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

357W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Height

5.1mm

Length

15.9mm

Width

21.1 mm

Standards/Approvals

RoHS

Series

STG

Automotive Standard

No

The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature: TJ = 175 °C

Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

Related links