STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247

View all IGBTs
Bulk discount available

Subtotal (1 tube of 30 units)*

MYR344.28

Add to Basket
Select or type quantity
In Stock
  • 630 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Tube*
30 - 30MYR11.476MYR344.28
60 - 90MYR11.224MYR336.72
120 +MYR11.017MYR330.51

*price indicative

RS Stock No.:
204-9877
Mfr. Part No.:
STGWA30H65DFB2
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

167 W

Number of Transistors

1

Package Type

TO-247

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links