Vishay SIA456DJ-T1-GE3 IGBT
- RS Stock No.:
- 180-7793
- Mfr. Part No.:
- SIA456DJ-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR31.85
FREE delivery for orders over RM 500.00
Last RS stock
- Final 1,120 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 740 | MYR3.185 | MYR31.85 |
| 750 - 1490 | MYR3.026 | MYR30.26 |
| 1500 + | MYR2.874 | MYR28.74 |
*price indicative
- RS Stock No.:
- 180-7793
- Mfr. Part No.:
- SIA456DJ-T1-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
- COO (Country of Origin):
- CN
The Vishay SIA456DJ is a N-channel MOSFET having drain to source voltage(Vds) of 200V and gate to source voltage (VGS) 16V. It is having power PAK SC-70 package. It is offers drain to source resistance (RDS.) of 1.38ohms at 4.5VGS and 1.5ohms at 2.5VGS. Maximum drain current 2.6A.
Trench FET power MOSFET
Thermally enhanced Power PAK SC-70 package
Small footprint area
Thermally enhanced Power PAK SC-70 package
Small footprint area