STMicroelectronics STGP7NC60HD, Type N-Channel IGBT, 25 A 600 V, 3-Pin TO-220, Through Hole

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Subtotal (1 tube of 50 units)*

MYR223.25

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  • 100 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
50 - 50MYR4.465MYR223.25
100 - 150MYR4.367MYR218.35
200 +MYR4.286MYR214.30

*price indicative

RS Stock No.:
178-1479
Mfr. Part No.:
STGP7NC60HD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

25A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

80W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Height

9.15mm

Standards/Approvals

No

Length

10.4mm

Width

4.6 mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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