Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 168-7768
- Mfr. Part No.:
- GT50JR22
- Manufacturer:
- Toshiba
Subtotal (1 tube of 25 units)**
MYR587.97
100 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Tube** |
---|---|---|
25 + | MYR23.519 | MYR587.975 |
**price indicative
- RS Stock No.:
- 168-7768
- Mfr. Part No.:
- GT50JR22
- Manufacturer:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Toshiba | |
Maximum Continuous Collector Current | 50 A | |
Maximum Collector Emitter Voltage | 600 V | |
Maximum Gate Emitter Voltage | ±25V | |
Maximum Power Dissipation | 230 W | |
Package Type | TO-3P | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Switching Speed | 1MHz | |
Transistor Configuration | Single | |
Dimensions | 15.5 x 4.5 x 20mm | |
Maximum Operating Temperature | +175 °C | |
Select all | ||
---|---|---|
Manufacturer Toshiba | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 230 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 4.5 x 20mm | ||
Maximum Operating Temperature +175 °C | ||
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