IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount
- RS Stock No.:
- 168-4411
- Mfr. Part No.:
- IXGT30N120B3D1
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
MYR1,469.46
FREE delivery for orders over RM 500.00
In Stock
- 270 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 30 | MYR48.982 | MYR1,469.46 |
| 60 - 90 | MYR48.228 | MYR1,446.84 |
| 120 + | MYR47.288 | MYR1,418.64 |
*price indicative
- RS Stock No.:
- 168-4411
- Mfr. Part No.:
- IXGT30N120B3D1
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Package Type | TO-268 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.05 x 14 x 5.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Package Type TO-268 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.05 x 14 x 5.1mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, IXYS
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.