IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole
- RS Stock No.:
- 125-8051
- Mfr. Part No.:
- IXXK110N65B4H1
- Manufacturer:
- IXYS
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Subtotal (1 unit)*
MYR97.45
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In Stock
- 18 unit(s) ready to ship from another location
- Plus 279 unit(s) shipping from 22 December 2025
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Units | Per Unit |
|---|---|
| 1 - 6 | MYR97.45 |
| 7 - 12 | MYR95.38 |
| 13 + | MYR92.50 |
*price indicative
- RS Stock No.:
- 125-8051
- Mfr. Part No.:
- IXXK110N65B4H1
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 570 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 880 W | |
| Package Type | TO-264 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 10 → 30kHz | |
| Transistor Configuration | Single | |
| Dimensions | 20.3 x 5.3 x 26.6mm | |
| Energy Rating | 3mJ | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 570 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 880 W | ||
Package Type TO-264 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 10 → 30kHz | ||
Transistor Configuration Single | ||
Dimensions 20.3 x 5.3 x 26.6mm | ||
Energy Rating 3mJ | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, IXYS
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IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.