IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount
- RS Stock No.:
- 124-0712
- Mfr. Part No.:
- MIXA450PF1200TSF
- Manufacturer:
- IXYS
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Subtotal (1 unit)*
MYR960.79
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Last RS stock
- Final 41 unit(s), ready to ship from another location
Units | Per Unit |
|---|---|
| 1 + | MYR960.79 |
*price indicative
- RS Stock No.:
- 124-0712
- Mfr. Part No.:
- MIXA450PF1200TSF
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current | 650 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 2.1 kW | |
| Configuration | Dual | |
| Package Type | SimBus F | |
| Mounting Type | PCB Mount | |
| Channel Type | N | |
| Pin Count | 11 | |
| Transistor Configuration | Series | |
| Dimensions | 152 x 62 x 17mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current 650 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 2.1 kW | ||
Configuration Dual | ||
Package Type SimBus F | ||
Mounting Type PCB Mount | ||
Channel Type N | ||
Pin Count 11 | ||
Transistor Configuration Series | ||
Dimensions 152 x 62 x 17mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Modules, IXYS
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.