Infineon, Gate Driver, 600 mA 8-Pin 600 V, SOIC

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Subtotal (1 tube of 95 units)*

MYR497.135

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Units
Per Unit
Per Tube*
95 - 95MYR5.233MYR497.14
190 - 190MYR5.076MYR482.22
285 - 475MYR4.873MYR462.94
570 - 950MYR4.629MYR439.76
1045 +MYR4.352MYR413.44

*price indicative

RS Stock No.:
257-5588
Mfr. Part No.:
IRS21091SPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Gate Driver

Output Current

600mA

Pin Count

8

Package Type

SOIC

Fall Time

35ns

Driver Type

Gate Driver

Rise Time

220ns

Minimum Supply Voltage

10V

Maximum Supply Voltage

600V

Minimum Operating Temperature

-50°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Series

IRS

Automotive Standard

No

The Infineon half bridge driver are high voltage, high speed power MOSFET and IGBT driver with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

Floating channel designed for bootstrap operation

Fully operational to +600 V

Tolerant to negative transient voltage, dV/dt immune

Under voltage lockout for both channels

Cross-conduction prevention logic

Matched propagation delay for both channels

High-side output in phase with IN input

Lower di/dt gate driver for better noise immunity

The dual function DT/SD input turns off both channels

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