Infineon 2ED2304S06FXUMA1 MOSFET Gate Driver 2, 360 mA 8-Pin 600 V, DSO

This image is representative of the product range

Subtotal (1 pack of 15 units)*

MYR56.595

Add to Basket
Select or type quantity
In Stock
  • 4,995 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
15 +MYR3.773MYR56.60

*price indicative

Packaging Options:
RS Stock No.:
226-6033
Mfr. Part No.:
2ED2304S06FXUMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

Gate Driver

Output Current

360mA

Pin Count

8

Package Type

DSO

Fall Time

40ns

Driver Type

MOSFET

Number of Outputs

2

Rise Time

48ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

600V

Number of Drivers

2

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Height

1.75mm

Width

4 mm

Length

5mm

Series

2ED2304S06F

Standards/Approvals

RoHS

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2304S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

Related links