Winbond SLC NAND 2Gbit Parallel Flash Memory 63-Pin VFBGA, W29N02GZBIBA
- RS Stock No.:
- 188-2874P
- Mfr. Part No.:
- W29N02GZBIBA
- Manufacturer:
- Winbond
Bulk discount available
Subtotal 54 units (supplied in a tray)*
MYR1,449.90
FREE delivery for orders over RM 500.00
In Stock
- 324 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 54 - 104 | MYR26.85 |
| 106 + | MYR26.04 |
*price indicative
- RS Stock No.:
- 188-2874P
- Mfr. Part No.:
- W29N02GZBIBA
- Manufacturer:
- Winbond
Technical data sheets
Legislation and Compliance
Product Details
- COO (Country of Origin):
- TW
Density : 2Gbit (Single chip solution)
Vcc : 1.7V to 1.95V
Bus width : x8 x16
Operating temperature
Industrial: -40°C to 85°C
Industrial Plus: -40°C to 105°C
Single-Level Cell (SLC) technology.
Organization
Density: 2G-bit/256M-byte
Page size
2,112 bytes (2048 + 64 bytes)
1,056 words (1024 + 32 words)
Block size
64 pages (128K + 4K bytes)
64 pages (64K + 2K words)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command
Additional command support
Copy Back
Two-plane operation
Contact Winbond for OTP f
Contact Winbond for Block
Lowest power consumption
Read: 13mA(typ.)
Program/Erase: 10mA(typ.)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
Vcc : 1.7V to 1.95V
Bus width : x8 x16
Operating temperature
Industrial: -40°C to 85°C
Industrial Plus: -40°C to 105°C
Single-Level Cell (SLC) technology.
Organization
Density: 2G-bit/256M-byte
Page size
2,112 bytes (2048 + 64 bytes)
1,056 words (1024 + 32 words)
Block size
64 pages (128K + 4K bytes)
64 pages (64K + 2K words)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command
Additional command support
Copy Back
Two-plane operation
Contact Winbond for OTP f
Contact Winbond for Block
Lowest power consumption
Read: 13mA(typ.)
Program/Erase: 10mA(typ.)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
2Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area