Cypress Semiconductor NOR 128Mbit Parallel Flash Memory 56-Pin TSOP, S29GL128P11TFI010
- RS Stock No.:
- 181-8356P
- Mfr. Part No.:
- S29GL128P11TFI010
- Manufacturer:
- Cypress Semiconductor
Bulk discount available
Subtotal 24 units (supplied in a tray)*
MYR645.00
Stock information currently inaccessible
Units | Per Unit |
|---|---|
| 24 - 44 | MYR26.875 |
| 46 + | MYR26.40 |
*price indicative
- RS Stock No.:
- 181-8356P
- Mfr. Part No.:
- S29GL128P11TFI010
- Manufacturer:
- Cypress Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 128Mbit | |
| Interface Type | Parallel | |
| Package Type | TSOP | |
| Pin Count | 56 | |
| Organisation | 16M x 8 bit | |
| Mounting Type | Surface Mount | |
| Cell Type | NOR | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Dimensions | 18.5 x 14.1 x 1.05mm | |
| Number of Bits per Word | 8bit | |
| Number of Words | 16M | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +85 °C | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 128Mbit | ||
Interface Type Parallel | ||
Package Type TSOP | ||
Pin Count 56 | ||
Organisation 16M x 8 bit | ||
Mounting Type Surface Mount | ||
Cell Type NOR | ||
Minimum Operating Supply Voltage 2.7 V | ||
Maximum Operating Supply Voltage 3.6 V | ||
Dimensions 18.5 x 14.1 x 1.05mm | ||
Number of Bits per Word 8bit | ||
Number of Words 16M | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +85 °C | ||
The Cypress S29GL01G/512/256/128P are Mirror bit Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.