onsemi MMBTA13LT3G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23

RS Stock No.:: 781-4288
Mfr. Part No.:: MMBTA13LT3G
Manufacturer:: onsemi

onsemi MMBTA13LT3G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23

Price Each (On a Tape of 100)

MYR0.266

18700 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Tape**
100 +	MYR0.266	MYR26.60

**price indicative

RS Stock No.:: 781-4288
Mfr. Part No.:: MMBTA13LT3G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	300 mA
Maximum Collector Emitter Voltage	30 V
Maximum Emitter Base Voltage	10 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	2
Minimum DC Current Gain	5000
Maximum Base Emitter Saturation Voltage	1.5 V
Maximum Collector Base Voltage	30 V
Maximum Collector Emitter Saturation Voltage	1.5 V
Maximum Collector Cut-off Current	100nA
Height	1.01mm
Dimensions	3.04 x 1.4 x 1.01mm
Length	3.04mm
Width	1.4mm
Minimum Operating Temperature	-55 °C
Maximum Power Dissipation	300 mW
Maximum Operating Temperature	+150 °C

onsemi MMBTA13LT3G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23

NPN Darlington Transistors, ON Semiconductor

Standards

Related links