onsemi MMBTA13LT1G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23

RS Stock No.:: 781-4279
Mfr. Part No.:: MMBTA13LT1G
Manufacturer:: onsemi

onsemi MMBTA13LT1G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23

Bulk discount available

Price Each (In a Pack of 100)

MYR0.266

1985 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

12000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
100 - 700	MYR0.266	MYR26.60
800 - 1400	MYR0.257	MYR25.70
1500 +	MYR0.244	MYR24.40

**price indicative

RS Stock No.:: 781-4279
Mfr. Part No.:: MMBTA13LT1G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	300 mA
Maximum Collector Emitter Voltage	30 V
Maximum Emitter Base Voltage	10 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	2
Minimum DC Current Gain	5000
Maximum Base Emitter Saturation Voltage	1.5 V
Maximum Collector Base Voltage	30 V
Maximum Collector Emitter Saturation Voltage	1.5 V
Maximum Collector Cut-off Current	100nA
Maximum Operating Temperature	+150 °C
Dimensions	3.04 x 1.4 x 1.01mm
Width	1.4mm
Height	1.01mm
Length	3.04mm
Maximum Power Dissipation	300 mW
Minimum Operating Temperature	-55 °C

onsemi MMBTA13LT1G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23

NPN Darlington Transistors, ON Semiconductor

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