Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Attribute | Value |
---|---|
Transistor Type | NPN |
Maximum DC Collector Current | 500 mA |
Maximum Collector Emitter Voltage | 40 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Maximum Power Dissipation | 1 W |
Minimum DC Current Gain | 100 |
Transistor Configuration | Isolated |
Maximum Collector Base Voltage | 75 V |
Maximum Emitter Base Voltage | 5 V |
Maximum Operating Frequency | 300 MHz |
Pin Count | 16 |
Number of Elements per Chip | 4 |
Width | 4mm |
Height | 1.5mm |
Maximum Operating Temperature | +150 °C |
Length | 10mm |
Dimensions | 10 x 4 x 1.5mm |
Maximum Base Emitter Saturation Voltage | 2 V |
Minimum Operating Temperature | -55 °C |
Maximum Collector Emitter Saturation Voltage | 1 V |