Nexperia PBSS4140T,215 NPN Transistor, 1 A, 40 V, 3-Pin SOT-23

  • RS Stock No. 518-1508
  • Mfr. Part No. PBSS4140T,215
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 40 V
Package Type SOT-23 (TO-236AB)
Mounting Type Surface Mount
Maximum Power Dissipation 450 mW
Minimum DC Current Gain 200
Transistor Configuration Single
Maximum Collector Base Voltage 40 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 150 MHz
Pin Count 3
Number of Elements per Chip 1
Width 1.4mm
Minimum Operating Temperature -65 °C
Height 1mm
Maximum Collector Emitter Saturation Voltage 0.5 V
Length 3mm
Maximum Base Emitter Saturation Voltage 1.2 V
Maximum Operating Temperature +150 °C
Dimensions 1 x 3 x 1.4mm
800 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 25)
MYR 0.393
units
Per unit
Per Pack*
25 - 25
MYR0.393
MYR9.825
50 - 100
MYR0.375
MYR9.375
125 - 225
MYR0.366
MYR9.15
250 - 475
MYR0.355
MYR8.875
500 +
MYR0.346
MYR8.65
*price indicative
Packaging Options:
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