Nexperia PUMZ1,115 Dual NPN Transistor, 100 mA, 40 V, 6-Pin SC-88

  • RS Stock No. 170-4853
  • Mfr. Part No. PUMZ1,115
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

For today’s increasingly efficient systems – where both power and space are at a premium – we offer SMD packages includes our ultra small leadless housing SOT883.

Ultra small 1006 sized SOT883 (SC-101) leadless package
Broad choice of SMD and leaded package options
Wide range of double and single functions
More than 300 different products
Key applications
General purpose switching and amplification

Two independently operating NPN/PNP transistors in an SC-88: SOT363 plastic package.

Low current (max. 100 mA)
Low voltage (max. 40 V)
Reduces number of components and boardspace.
Target applications
General purpose switching and amplification.

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 100 mA
Maximum Collector Emitter Voltage 40 V
Package Type SC-88
Mounting Type Surface Mount
Maximum Power Dissipation 300 mW
Minimum DC Current Gain 120
Transistor Configuration Current Mirror
Maximum Collector Base Voltage 50 V
Maximum Emitter Base Voltage 5 V
Pin Count 6
Number of Elements per Chip 2
Minimum Operating Temperature -65 °C
Width 1.35mm
Automotive Standard AEC-Q101
Maximum Collector Emitter Saturation Voltage 200 mV
Height 1mm
Maximum Operating Temperature +150 °C
Dimensions 2.2 x 1.35 x 1mm
Length 2.2mm
Temporarily out of stock - back order for despatch when stock is available
Price Each (On a Reel of 3000)
MYR 0.201
units
Per unit
Per Reel*
3000 - 3000
MYR0.201
MYR603.00
6000 - 12000
MYR0.192
MYR576.00
15000 - 27000
MYR0.187
MYR561.00
30000 - 72000
MYR0.179
MYR537.00
75000 +
MYR0.174
MYR522.00
*price indicative
Related Products
40 V, 15 A NPN high power bipolar ...
Description:
40 V, 15 A NPN high power bipolar transistor, NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60415PY. High thermal power dissipation capabilityHigh temperature applications up to 175 °CReduced Printed Circuit ...
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results ...
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Devices integrating two transistors are available in ultra-compact ...
Description:
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth. Compact complex bipolar power transistorFor DC-DC converterSmall Surface Mount PackagePb ...