Nexperia PHPT61002NYCX NPN Transistor, 2 A, 100 V, 4 + Tab-Pin LFPAK56, SOT669

  • RS Stock No. 151-3221
  • Mfr. Part No. PHPT61002NYCX
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

100V, 2 A NPN high power bipolar transistor, NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61002PYC

High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 2 A
Maximum Collector Emitter Voltage 100 V
Package Type LFPAK56, SOT669
Mounting Type Surface Mount
Maximum Power Dissipation 25 W
Minimum DC Current Gain 10
Transistor Configuration Single
Maximum Collector Base Voltage 100 V
Maximum Emitter Base Voltage 7 V
Maximum Operating Frequency 140 MHz
Pin Count 4 + Tab
Number of Elements per Chip 1
Width 4.1mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Dimensions 5 x 4.1 x 1.05mm
Maximum Collector Emitter Saturation Voltage 300 mV
Height 1.05mm
Length 5mm
4875 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 25)
MYR 1.289
units
Per unit
Per Pack*
25 - 100
MYR1.289
MYR32.225
125 - 225
MYR1.176
MYR29.40
250 - 600
MYR1.078
MYR26.95
625 - 1225
MYR1.028
MYR25.70
1250 +
MYR0.979
MYR24.475
*price indicative
Packaging Options:
Related Products
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
40 V, 15 A NPN high power bipolar ...
Description:
40 V, 15 A NPN high power bipolar transistor, NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60415PY. High thermal power dissipation capabilityHigh temperature applications up to 175 °CReduced Printed Circuit ...
Low VCEsat (BISS) power transistors single, Meeting the ...
Description:
Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions ...
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results ...