Essential and Operational Technologies

These cookies make our website work. This includes product images and videos, functionality for the basket, logging in, remembering your username, registration and My Account.

We use optimisation cookies to test new features and designs on our website. The information collected helps us improve our website and our customers' experience.

Advertising

These cookies are used to understand the performance and relevancy of our adverts, to provide you with personalised adverts on other websites and social media, to track when you have arrived at our site from a recognised third-party affiliate website, and to track if you made a purchase based on the adverts we displayed to you.

Recommendations

These cookies enable us to provide personalised product and content recommendations, to make the browsing experience more relevant to you.

Functionality

These cookies are used to offer customer surveys and feedback, to improve search results, and to allow you to share content from our website on social media.

Analytics

These cookies help us improve our website by collecting and reporting information on how you use it.

Units	Per Unit	Per Reel*
2000 - 2000	MYR3.018	MYR6,036.00
4000 - 6000	MYR2.952	MYR5,904.00
8000 +	MYR2.898	MYR5,796.00

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	160 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	3.9 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.35V
	Minimum Gate Threshold Voltage	1.35V
	Maximum Power Dissipation	135 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	39 nC @ 4.5 V
	Maximum Operating Temperature	+175 °C
	Length	6.73mm
	Transistor Material	Si
	Width	6.22mm
	Minimum Operating Temperature	-55 °C
	Height	2.39mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 160 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 3.9 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.35V
	Minimum Gate Threshold Voltage 1.35V
	Maximum Power Dissipation 135 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 39 nC @ 4.5 V
	Maximum Operating Temperature +175 °C
	Length 6.73mm
	Transistor Material Si
	Width 6.22mm
	Minimum Operating Temperature -55 °C
	Height 2.39mm

Infineon HEXFET N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743TRPBF

FREE delivery for orders over RM 500.00

N-Channel Power MOSFET 30V, Infineon

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.