Infineon 4V 110mA, Schottky Diode, 2-Pin SOD-323 BAT1503WE6327HTSA1

The Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

RoHS compliant and halogen-free
Low capacitance and inductance

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