STMicroelectronics Demonstration Board IGBT, MOSFET Driver for EVALSTDRV600HB8 for L638xE and L639x High Voltage Gate
- RS Stock No.:
- 165-3193
- Mfr. Part No.:
- EVALSTDRV600HB8
- Manufacturer:
- STMicroelectronics
Subtotal (1 unit)*
MYR165.37
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- 6 left, ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 + | MYR165.37 |
*price indicative
- RS Stock No.:
- 165-3193
- Mfr. Part No.:
- EVALSTDRV600HB8
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Power Management Function | IGBT, MOSFET Driver | |
| For Use With | L638xE and L639x High Voltage Gate Drivers | |
| Kit Classification | Development Board | |
| Featured Device | EVALSTDRV600HB8 | |
| Kit Name | Demonstration Board | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Power Management Function IGBT, MOSFET Driver | ||
For Use With L638xE and L639x High Voltage Gate Drivers | ||
Kit Classification Development Board | ||
Featured Device EVALSTDRV600HB8 | ||
Kit Name Demonstration Board | ||
STMicroelectronics EVALSTDRV600HB8 Demonstration Board Kit
The STMicroelectronics EVALSTDRV600HB8 demonstration board kit is developed for L638xE and L639x series high voltage compatible gate drivers and allows evaluating all of the gate driver features and functionalities while driving a half-bridge power stage based on N-channel MOSFETs or IGBTs in several different packages and with a voltage rating up to 600V. Vital components such as filtering and bootstrap capacitor are already mounted on the PCB. Passive components footprints are compatible with both SMT and T. H. Components, so they allow a fast and easy configuration and modification. This demonstration board kit is used for L638xE and L639x high voltage gates.
Features and Benefits
• Ability to drive asymmetrical half-bridges and switched reluctance motors
• Active high or active low LIN for single input gate driving
• Compact and simplified layout
• Compatible with MOSFETs/IGBTs in DPAK, D2PAK, TO-220, TO-220FP
• Dedicated high and low-side driving inputs
• Gate drivers in the kit features different functionalities and characteristics
• Half-bridge configuration
• High voltage rail up to 600V
• Integrated bootstrap diode
• Interlocking for anti-cross conduction protection
• Internal deadtime or no deadtime
• Active high or active low LIN for single input gate driving
• Compact and simplified layout
• Compatible with MOSFETs/IGBTs in DPAK, D2PAK, TO-220, TO-220FP
• Dedicated high and low-side driving inputs
• Gate drivers in the kit features different functionalities and characteristics
• Half-bridge configuration
• High voltage rail up to 600V
• Integrated bootstrap diode
• Interlocking for anti-cross conduction protection
• Internal deadtime or no deadtime