Infineon, 32bit ARM Cortex M7, XMC7200 Microcontroller, 350MHz, 1024 KB SRAM, 176-Pin TQFP
- RS Stock No.:
- 260-1111P
- Mfr. Part No.:
- XMC7200D-F176K8384AA
- Manufacturer:
- Infineon
Bulk discount available
Subtotal 10 units (supplied in a tray)*
MYR933.40
FREE delivery for orders over RM 500.00
In Stock
- Plus 374 unit(s) shipping from 08 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 10 - 39 | MYR93.34 |
| 40 - 79 | MYR89.60 |
| 80 - 119 | MYR84.22 |
| 120 + | MYR78.32 |
*price indicative
- RS Stock No.:
- 260-1111P
- Mfr. Part No.:
- XMC7200D-F176K8384AA
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Family Name | XMC7200 | |
| Package Type | TQFP | |
| Mounting Type | Surface Mount | |
| Pin Count | 176 | |
| Device Core | ARM Cortex M7 | |
| Data Bus Width | 32bit | |
| Program Memory Size | 1024 KB | |
| Maximum Frequency | 350MHz | |
| RAM Size | 32 kB | |
| Number of SPI Channels | 10 | |
| Number of UART Channels | 1 | |
| Number of I2C Channels | 10 | |
| Typical Operating Supply Voltage | 2.7 → 5.5 V | |
| Height | 1.5mm | |
| Data Rate | 10Mbps | |
| Width | 24mm | |
| Dimensions | 24 x 24 x 1.5mm | |
| Maximum Operating Temperature | +125 °C | |
| Length | 24mm | |
| ADCs | 96 x 12 bit | |
| Maximum Number of Ethernet Channels | 2 | |
| Instruction Set Architecture | RISC | |
| Minimum Operating Temperature | -40 °C | |
| Program Memory Type | SRAM | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Family Name XMC7200 | ||
Package Type TQFP | ||
Mounting Type Surface Mount | ||
Pin Count 176 | ||
Device Core ARM Cortex M7 | ||
Data Bus Width 32bit | ||
Program Memory Size 1024 KB | ||
Maximum Frequency 350MHz | ||
RAM Size 32 kB | ||
Number of SPI Channels 10 | ||
Number of UART Channels 1 | ||
Number of I2C Channels 10 | ||
Typical Operating Supply Voltage 2.7 → 5.5 V | ||
Height 1.5mm | ||
Data Rate 10Mbps | ||
Width 24mm | ||
Dimensions 24 x 24 x 1.5mm | ||
Maximum Operating Temperature +125 °C | ||
Length 24mm | ||
ADCs 96 x 12 bit | ||
Maximum Number of Ethernet Channels 2 | ||
Instruction Set Architecture RISC | ||
Minimum Operating Temperature -40 °C | ||
Program Memory Type SRAM | ||
Infineon Microcontroller, 1024 KB Program Memory size, 350 MHz Maximum Frequency - XMC7200D-F176K8384AA
This high-performance MOSFET from Infineon is designed for use in various power management applications. Featuring a TO-220 package, it provides robust performance with a maximum continuous drain current of 50A and a maximum drain-source voltage of 30V. With a low on-resistance and high power dissipation capability, this MOSFET ensures optimal efficiency in demanding electrical systems.
Features & Benefits
• Low drain-source resistance (7.8 mΩ) reduces power loss and enhances operational efficiency
• Maximum power dissipation of 68W ensures reliable operation under high-load conditions
• Wide gate threshold voltage range (1V to 2.2V) offers flexible control for different voltage levels
• High thermal stability with a maximum operating temperature of +175°C
• Enhancement-mode design for efficient switching and precise control of current flow
• Robust gate-source voltage tolerance (-20V to +20V) ensures protection against overvoltage
• Single-transistor configuration ideal for space-constrained designs
• Maximum power dissipation of 68W ensures reliable operation under high-load conditions
• Wide gate threshold voltage range (1V to 2.2V) offers flexible control for different voltage levels
• High thermal stability with a maximum operating temperature of +175°C
• Enhancement-mode design for efficient switching and precise control of current flow
• Robust gate-source voltage tolerance (-20V to +20V) ensures protection against overvoltage
• Single-transistor configuration ideal for space-constrained designs
Applications
• Suitable for DC/DC converters and power supply
• Used in synchronous rectification for improved converter efficiency
• Ideal for motor control in industrial automation systems
• Employed in battery management systems for electric vehicles
• Applicable in renewable energy systems and consumer electronics
• Used in synchronous rectification for improved converter efficiency
• Ideal for motor control in industrial automation systems
• Employed in battery management systems for electric vehicles
• Applicable in renewable energy systems and consumer electronics
What is the advantage of the low drain-source resistance (RDS(on))?
The low RDS(on) minimises conduction losses and heat generation, improving the overall efficiency of power management systems and ensuring more energy is converted into useful work rather than being lost as heat.
How does the MOSFET handle high power dissipation?
With a maximum power dissipation rating of 68W, the device is designed to manage significant heat during operation, maintaining stability even in demanding conditions.
What is the significance of the gate threshold voltage range?
The wide gate threshold voltage range (1V to 2.2V) provides flexibility in circuit design, allowing the MOSFET to operate efficiently with various control voltages, making it suitable for different applications requiring precise voltage management.
