Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

RS Stock No.:: 891-2743
Mfr. Part No.:: GT40QR21,F(O
Manufacturer:: Toshiba

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

This image is representative of the product range

Temporarily out of stock - back order for despatch 03/07/2024, delivery within 6 working days from despatch date

Price Each

MYR22.66

Units	Per Unit
1 - 4	MYR22.66
5 +	MYR21.96

RS Stock No.:: 891-2743
Mfr. Part No.:: GT40QR21,F(O
Manufacturer:: Toshiba

GT40QR21, Silicon N-Channel IGBT
ESD Control Selection Guide V1

Attribute	Value
Maximum Continuous Collector Current	40 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±25V
Maximum Power Dissipation	230 W
Package Type	TO-3P
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	2.5MHz
Transistor Configuration	Single
Dimensions	15.5 x 4.5 x 20mm
Gate Capacitance	1500pF
Maximum Operating Temperature	175 °C
Energy Rating	0.29mJ

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

IGBT Discretes, Toshiba