IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B
- RS Stock No. 804-7616
- Mfr. Part No. IXDN55N120D1
- Manufacturer IXYS
Technical data sheets
Product Details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
| Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 450 W |
| Package Type | SOT-227B |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 4 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Length | 38.2mm |
| Width | 25.07mm |
| Height | 9.6mm |
| Dimensions | 38.2 x 25.07 x 9.6mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -40 °C |
1 In Global stock for delivery within 4 - 6 working days
Price Each
Was
MYR105.44
MYR
85.86
units
Per unit
1 - 9
MYR85.86
10 - 49
MYR84.74
50 - 99
MYR83.64
100 - 249
MYR82.54
250 +
MYR81.50
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