Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 796-5064
- Mfr. Part No.:
- GT50JR22
- Manufacturer:
- Toshiba
14 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
80 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
MYR30.27
| Units | Per Unit |
| 1 - 6 | MYR30.27 |
| 7 - 12 | MYR29.67 |
| 13 + | MYR29.08 |
- RS Stock No.:
- 796-5064
- Mfr. Part No.:
- GT50JR22
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, Toshiba
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 230 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 4.5 x 20mm |
| Maximum Operating Temperature | +175 °C |