Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 796-5058
- Mfr. Part No.:
- GT30J121
- Manufacturer:
- Toshiba
4 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
70 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
Was MYR19.11
You pay
MYR16.70
| Units | Per Unit |
| 1 - 12 | MYR16.70 |
| 13 - 24 | MYR16.47 |
| 25 + | MYR16.18 |
- RS Stock No.:
- 796-5058
- Mfr. Part No.:
- GT30J121
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, Toshiba
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 170 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.9 x 4.8 x 20mm |
| Maximum Operating Temperature | +150 °C |