Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- RS Stock No.:
- 258-3756
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 1000 units)*
MYR12,495.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 18 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | MYR12.495 | MYR12,495.00 |
| 2000 - 2000 | MYR11.246 | MYR11,246.00 |
| 3000 + | MYR10.121 | MYR10,121.00 |
*price indicative
- RS Stock No.:
- 258-3756
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
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Select all | Attribute | Value |
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| Brand | Infineon | |
| Package Type | PG-TO263-7 | |
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|---|---|---|
Brand Infineon | ||
Package Type PG-TO263-7 | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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