This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO-247-4L for Minimal Eon Losses
Optimized for High Speed Switching
These are Pb-Free Devices
Solar Inverter
Uninterruptible Power Inverter Supplies
Neutral Point Clamp Topology

Units	Per Unit
113 - 224	MYR40.54
225 +	MYR36.44

Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current	200 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	375 W
	Package Type	TO-247
	Mounting Type	Through Hole
	Channel Type	P
	Pin Count	4
	Switching Speed	1MHz
	Transistor Configuration	Single
	Dimensions	15.8 x 5.2 x 22.74mm
	Energy Rating	160mJ
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Gate Capacitance	5100pF

	Select all
	Brand onsemi
	Maximum Continuous Collector Current 200 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 375 W
	Package Type TO-247
	Mounting Type Through Hole
	Channel Type P
	Pin Count 4
	Switching Speed 1MHz
	Transistor Configuration Single
	Dimensions 15.8 x 5.2 x 22.74mm
	Energy Rating 160mJ
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Gate Capacitance 5100pF

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

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