- RS Stock No.:
- 181-1865
- Mfr. Part No.:
- FGH75T65SQDTL4
- Manufacturer:
- ON Semiconductor
Discontinued product
- RS Stock No.:
- 181-1865
- Mfr. Part No.:
- FGH75T65SQDTL4
- Manufacturer:
- ON Semiconductor
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Using novel field stop IGBT technology, ON semiconductors new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 150 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 375 W |
Number of Transistors | 1 |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | P |
Pin Count | 4 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.8 x 5.2 x 22.74mm |
Gate Capacitance | 4845pF |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |
Energy Rating | 160mJ |