Vishay SI7121ADN-T1-GE3 IGBT

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Subtotal (1 pack of 20 units)*

MYR47.64

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Being discontinued
  • Final 520 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
20 - 740MYR2.382MYR47.64
760 - 1480MYR2.298MYR45.96
1500 +MYR2.184MYR43.68

*price indicative

Packaging Options:
RS Stock No.:
180-7866
Mfr. Part No.:
SI7121ADN-T1-GE3
Manufacturer:
Vishay
COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel PowerPAK-1212 MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 25V. It has a drain-source resistance of 15mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 27.8W and continuous drain current of 18A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. With the help of this MOSFET, excellent performance and efficiency can be achieved at lower costs. The MOSFET offers excellent efficiency along with long productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Low thermal resistance powerpak package with small size
• Maximum dissipation power is 27.8W
• Operating temperature ranges between -50°C and 150°C
• TrenchFET power MOSFET

Applications


• Mobile computing
• Adaptor switches
• Load switches - Battery management
• Notebook computers
• Power management

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.