Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole
- RS Stock No.:
- 168-7764
- Mfr. Part No.:
- GT20J341
- Manufacturer:
- Toshiba
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 168-7764
- Mfr. Part No.:
- GT20J341
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Maximum Continuous Collector Current | 20 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 45 W | |
| Package Type | TO-220SIS | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 100kHz | |
| Transistor Configuration | Single | |
| Dimensions | 10 x 4.5 x 15mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current 20 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 45 W | ||
Package Type TO-220SIS | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 100kHz | ||
Transistor Configuration Single | ||
Dimensions 10 x 4.5 x 15mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- JP
IGBT Discretes, Toshiba
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IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.