- RS Stock No.:
- 124-1446
- Mfr. Part No.:
- FGH40T120SMD
- Manufacturer:
- onsemi
420 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Tube of 30)
MYR36.604
Units | Per Unit | Per Tube* |
30 - 30 | MYR36.604 | MYR1,098.12 |
60 - 90 | MYR35.799 | MYR1,073.97 |
120 + | MYR35.14 | MYR1,054.20 |
*price indicative |
- RS Stock No.:
- 124-1446
- Mfr. Part No.:
- FGH40T120SMD
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 555 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.87 x 4.82 x 20.82mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |