Renesas Electronics RJH65D27BDPQ-A0#T2 IGBT, 100 A 650 V, 3-Pin TO-247A, Through Hole
- RS Stock No.:
- 124-0907P
- Mfr. Part No.:
- RJH65D27BDPQ-A0#T2
- Manufacturer:
- Renesas Electronics
Bulk discount available
Subtotal 5 units (supplied in a tube)*
MYR190.45
Stock information currently inaccessible
Units | Per Unit |
|---|---|
| 5 - 9 | MYR38.09 |
| 10 - 49 | MYR36.29 |
| 50 - 99 | MYR34.75 |
| 100 + | MYR33.39 |
*price indicative
- RS Stock No.:
- 124-0907P
- Mfr. Part No.:
- RJH65D27BDPQ-A0#T2
- Manufacturer:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 375 W | |
| Package Type | TO-247A | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.94 x 5.02 x 21.13mm | |
| Gate Capacitance | 2850pF | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 375 W | ||
Package Type TO-247A | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.94 x 5.02 x 21.13mm | ||
Gate Capacitance 2850pF | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- CN
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.