onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 123-8830
- Mfr. Part No.:
- NGTB25N120FL3WG
- Manufacturer:
- onsemi
18 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Pack of 2)
MYR30.915
| Units | Per Unit | Per Pack* |
| 2 - 6 | MYR30.915 | MYR61.83 |
| 8 - 14 | MYR29.815 | MYR59.63 |
| 16 + | MYR27.725 | MYR55.45 |
| *price indicative | ||
- RS Stock No.:
- 123-8830
- Mfr. Part No.:
- NGTB25N120FL3WG
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 349 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 16.25 x 5.3 x 21.4mm |
| Minimum Operating Temperature | -55 °C |
| Gate Capacitance | 3085pF |
| Maximum Operating Temperature | +175 °C |