Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole
- RS Stock No.:
- 184-521
- Mfr. Part No.:
- GT60J323(Q)
- Manufacturer:
- Toshiba
3 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
10 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
MYR38.87
| Units | Per Unit |
| 1 - 19 | MYR38.87 |
| 20 - 49 | MYR38.05 |
| 50 - 99 | MYR36.91 |
| 100 + | MYR35.80 |
- RS Stock No.:
- 184-521
- Mfr. Part No.:
- GT60J323(Q)
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Package Type | TO-3PLH |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 20.5 x 5.2 x 26mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |