IXYS MIXA225PF1200TSF Dual IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB Mount
- RS Stock No.:
- 124-0710
- Mfr. Part No.:
- MIXA225PF1200TSF
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 10/03/2026, delivery within 4 working days from despatch date
Added
Price Each
MYR896.65
| Units | Per Unit |
| 1 + | MYR896.65 |
- RS Stock No.:
- 124-0710
- Mfr. Part No.:
- MIXA225PF1200TSF
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
IGBT Modules, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 360 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 1100 W |
| Package Type | SimBus F |
| Configuration | Dual |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 11 |
| Transistor Configuration | Series |
| Dimensions | 152 x 62 x 17mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +150 °C |