IXYS MIXA225PF1200TSF, SimBus F Dual IGBT Transistor Module, 360 A max, 1200 V, PCB Mount

  • RS Stock No. 124-0710
  • Mfr. Part No. MIXA225PF1200TSF
  • Manufacturer IXYS
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Transistor Configuration Series
Configuration Dual
Maximum Continuous Collector Current 360 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±30V
Channel Type N
Mounting Type PCB Mount
Package Type SimBus F
Pin Count 11
Maximum Power Dissipation 1.1 kW
Dimensions 152 x 62 x 17mm
Height 17mm
Length 152mm
Maximum Operating Temperature +150 °C
Width 62mm
Minimum Operating Temperature -40 °C
Temporarily out of stock - back order for despatch 09/02/2021, delivery within 4 working days from despatch date
Price Each
MYR 520.98
Per unit
1 - 4
5 - 9
10 +