The STMicroelectronics MASTERGAN5TR is high power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs. The MASTERGAN5 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 450 mΩ, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. It is a High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs.
Reverse current capability Zero reverse recovery loss UVLO protection on low-side and high-side Internal bootstrap diode Interlocking function Accurate internal timing match 3.3 V to 15 V compatible inputs with hysteresis and pull-down
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
