3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.
Maximum blocking voltage 600V Six independent drivers Control via 3.3V logic Under-voltage detection with hysteresis Over-current detection
MOSFET & IGBT Drivers, Infineon (International Rectifier)