Ramtron International Corp 16kbit SPI FRAM Memory 8-Pin SOIC, FM25C160-G
- RS Stock No.:
- 716-5703
- Mfr. Part No.:
- FM25C160-G
- Manufacturer:
- Ramtron International Corp
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- RS Stock No.:
- 716-5703
- Mfr. Part No.:
- FM25C160-G
- Manufacturer:
- Ramtron International Corp
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Ramtron International Corp | |
| Memory Size | 16kbit | |
| Organisation | 2048 x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.9 x 3.9 x 1.5mm | |
| Length | 4.9mm | |
| Width | 3.90mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Height | 1.5mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Number of Bits per Word | 8bit | |
| Number of Words | 2048 | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Ramtron International Corp | ||
Memory Size 16kbit | ||
Organisation 2048 x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.9 x 3.9 x 1.5mm | ||
Length 4.9mm | ||
Width 3.90mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Height 1.5mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 4.5 V | ||
Number of Bits per Word 8bit | ||
Number of Words 2048 | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- TH
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.