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Cypress Semiconductor 2Mbit SPI FRAM Memory 8-Pin DFN, FM25V20A-DG

370 In stock for delivery within 4 working days
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Price Each (In a Tube of 74)




RS Stock No.:
Mfr. Part No.:
Cypress Semiconductor
COO (Country of Origin):
unitsPer unitPer Tube*
74 - 74MYR67.57MYR5,000.18
148 +MYR59.104MYR4,373.696
*price indicative

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K ´ 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast SPI
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 μA active current at 1 MHz
100 μA (typ) standby current
3 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Memory Size2Mbit
Organisation256k x 8 bit
Interface TypeSPI
Data Bus Width8bit
Mounting TypeSurface Mount
Package TypeDFN
Pin Count8
Dimensions6 x 5 x 0.7mm
Maximum Operating Supply Voltage3.6 V
Maximum Operating Temperature+85 °C
Number of Bits per Word8bit
Automotive StandardAEC-Q100
Minimum Operating Supply Voltage2 V
Number of Words256k
Minimum Operating Temperature-40 °C