Infineon 1Mbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24V10-G

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Subtotal 25 units (supplied in a tube)*

MYR1,775.25

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Units
Per Unit
25 - 48MYR71.01
49 +MYR69.58

*price indicative

Packaging Options:
RS Stock No.:
125-4215P
Mfr. Part No.:
FM24V10-G
Manufacturer:
Infineon

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.